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2SK4093
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
Features
* Capable of 2.5V gate drive * Low drive current * Low on-resistance
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
D
G
1. Source 2. Drain 3. Gate
32
1
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 30% 2. PW 10 s, duty cycle 1% Symbol VDSS VGSS ID Note1 ID (pulse)Note2 IDR IDR (pulse)Note2 Pch ch-a Tch Tstg Ratings 250 10 1 2 0.5 2 0.9 139 150 -55 to +150 Unit V V A A A A W C/W C C
REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 1 of 6
2SK4093
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 250 10 -- -- 0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.9 2.0 140 18 6 14 17 46 16 5.5 0.4 3.1 0.78 80 Max -- -- 1 10 1.5 2.6 2.7 -- -- -- -- -- -- -- -- -- -- 1.20 -- Unit V V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = 250 V, VGS = 0 VGS = 8 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 4 V Note3 ID = 0.5 A, VGS = 2.5 V Note3 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.5 A VGS = 4 V RL = 250 Rg = 10 VDD = 200 V VGS = 4 V ID = 1 A IF = 0.5 A, VGS = 0 Note3 IF = 0.5 A, VGS = 0 diF/dt = 100 A/s
REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 2 of 6
2SK4093
Main Characteristics
Maximum Safe Operation Area
10
10 s
Typical Output Characteristics
2.0
2V 4V
Drain Current ID (A)
Drain Current ID (A)
1
PW = 100 s
1.6
8 V, 10 V 1.8 V
0.1
Operation in this area is limited by RDS(on)
1.2
0.01
0.8
1.6 V
0.001
Ta = 25C 1 shot
0.4
Pulse Test
VGS = 1.4 V
0.001 0.1
1
10
100
1000
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) ()
10 5 VGS = 2.5 V 4V 1 0.5
Typical Transfer Characteristics
1 0.5 VDS = 10 V Pulse Test
Drain Current ID (A)
0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0 0.5 1.0 1.5 2.0 2.5 Tc = 75C 25C -25C
2
0.2 0.1 0.1 Pulse Test 0.2 0.5 1 2 5 10
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature
10 VGS = 2.5 V Pulse Test
Drain Current
ID (A)
Static Drain to Source on State Resistance RDS(on) ()
Static Drain to Source on State Resistance RDS(on) ()
Static Drain to Source on State Resistance vs. Temperature
10 VGS = 4 V Pulse Test
8
8
6 ID = 1 A
0.5 A
6 0.5 A 4 ID = 1 A 0.25 A 2 0 -25
4
0.25 A 2 0 -25
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Case Temperature
Tc (C)
Case Temperature
Tc (C)
REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 3 of 6
2SK4093
Body-Drain Diode Reverse Recovery Time
1000 1000 300 Ciss
Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
500 200 100 50 20 10 5 2 1 0.1 di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1
Capacitance C (pF)
100 30 10 3 1 0.3 0.1 0 VGS = 0 f = 1 MHz 50 100 150 Coss Crss
Reverse Drain Current
IDR (A)
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
VDS (V) VGS (V)
400 ID = 1 A 300 VGS 200 VDS VDD = 200 V 100 V 50 V VDD = 200 V 100 V 50 V 4 8 12 16 8 12 16 2.0
Reverse Drain Current vs. Source to Drain Voltage
IDR (A)
Pulse Test 1.6
Drain to Source Voltage
Gate to Source Voltage
Reverse Drain Current
1.2
0.8 0.4 VGS = 4 V
100
4
-4 V 0V
0
0 20
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nC)
Source to Drain Voltage
VSD (V)
Gate to Source Cutoff Voltage vs. Case Temperature
2.5 VDS = 10 V 2.0
Gate to Source Cutoff Voltage VGS(off) (V)
1.5 1 mA 1.0 ID = 10 mA 0.1 mA
0.5 0 -25
0
25
50
75
100 125 150
Case Temperature
Tc (C)
REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 4 of 6
2SK4093
Normalized Transient Thermal Impedance vs. Pulse Width
10
Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.2
0.1
ch - a (t) = s (t) * ch - a ch - a = 139C/W, Ta = 25C
0.1
0.05
0.02
PDM PW T
D=
PW T
0.01 10
0.01 ulse ot p 1sh
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL
10
Waveform
Vout Monitor Vin Vout 10%
10% 90%
Vin 4V
VDD = 125 V 90% td(on) tr 90% td(off)
10%
tf
REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 5 of 6
2SK4093
Package Dimensions
Package Name TO-92 Mod JEITA Package Code SC-51 RENESAS Code PRSS0003DC-A Previous Code TO-92 Mod / TO-92 ModV MASS[Typ.] 0.35g
Unit: mm
4.8 0.4
3.8 0.4
0.65 0.1 0.75 Max 0.55 Max 0.60 Max
2.3 Max 0.7
10.1 Min
8.0 0.5
0.5 Max
1.27 2.54
Ordering Information
Part No. 2SK4093TZ-E Quantity 2500 pcs Shipping Container Hold Box, Radial Taping
REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 6 of 6
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